Paul E. Dodd

Electrical and Electronic Engineering · 2001–2013

A researcher in the Science corpus: 9 papers; trusts 4 researchers and is trusted by 7 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 34 citations into it; #4,111 of 16,539 by trust here, #6,767 by citations
• Hardware and Architecture — 15 citations into it; #1,355 of 1,551 by trust here, #1,043 by citations

Whom Paul E. Dodd trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Norbert Seifert
2. Lloyd W. Massengill
3. R. Lacoe
4. Robert C. Baumann
5. M. Shaneyfelt
6. J. Schwank

Who trusts Paul E. Dodd overall

1. D. Fleetwood
2. Lloyd W. Massengill
3. Véronique Ferlet-Cavrois
4. Robert C. Baumann
5. M. Shaneyfelt
6. J. Schwank
7. Simone Gerardin
8. Quming Zhou
9. Pascale Gouker
10. Jeffrey D. Black

Papers from Paul E. Dodd's perspective

Ordered by how strongly the researchers Paul E. Dodd trusts endorse each paper. Same corpus, a different order for every researcher.

1. Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs (IEEE Transactions on Nuclear Science)
2. Impact of CMOS technology scaling on the atmospheric neutron soft error rate
3. Production and propagation of single-event transients in high-speed digital logic ICs (IEEE Transactions on Nuclear Science)
4. On-Chip Characterization of Single-Event Transient Pulsewidths (IEEE transactions on device and materials reliability)
5. Heavy ion-induced digital single-event transients in deep submicron Processes (IEEE Transactions on Nuclear Science)
6. SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments
7. The impact of technology scaling on soft error rate performance and limits to the efficacy of error correction (Digest. International Electron Devices Meeting,)
8. Basic mechanisms and modeling of single-event upset in digital microelectronics
9. A digital CMOS design technique for SEU hardening
10. The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM (IEEE Transactions on Nuclear Science)

Their papers

• Basic mechanisms and modeling of single-event upset in digital microelectronics (2003) — 1,189 citations
• Production and propagation of single-event transients in high-speed digital logic ICs (2004) — 339 citations
• New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening (2007) — 138 citations
• Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM (2008) — 160 citations
• SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments (2001) — 186 citations
• Radiation Effects in MOS Oxides (2008) — 772 citations
• Radiation effects in SOI technologies (2003) — 429 citations
• Current and Future Challenges in Radiation Effects on CMOS Electronics (2010) — 355 citations
• Physics of Multiple-Node Charge Collection and Impacts on Single-Event Characterization and Soft Error Rate Prediction (2013) — 163 citations