SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

By Paul E. Dodd, A. R. Shaneyfelt, K. M. Horn, D. Walsh, G. L. Hash, T. A. Hill, B. Draper, J. Schwank, F. Sexton, P. Winokur. 2001

186 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Radiation effects in SOI technologies (2003, background): “Additional broadbeam SRAM experiments [85] showed that the majority of the charge (as observed by Dodd [ 84 ]) was from drain strikes liberating charge in the drain regions.”
Production and propagation of single-event transients in high-speed digital logic ICs (2004, background): “Although it has been shown that drain strikes can cause upsets in some SOI technologies [21], gate strikes are still usually the worst-case SOI strike location.”
Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs (2006, background): “For example, in some works [1]–[3] the impact of different”
Basic mechanisms and modeling of single-event upset in digital microelectronics (2003, methodology): “Combining the information in the individual upset maps, the full upset cross section curve was predicted and found to be in excellent agreement with experimental results [92].”