Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

By V. Ferlet-Cavrois, P. Paillet, M. Gaillardin, D. Lambert, J. Baggio, J. Schwank, G. Vizkelethy, M. Shaneyfelt, K. Hirose, E. Blackmore and 3 more. IEEE Transactions on Nuclear Science, 2006

157 citations recorded by the source corpus.

The statistical transient response of floating body SOI and bulk devices is measured under proton and heavy ion irradiation. The influence of the device architecture is analyzed in detail for several generations of technologies, from 0.25 mum to 70nm. The effects of the measured transients on SET sensitivity are investigated. The amount of collected charge and the shape of the transient currents are shown to have a significant impact on the temporal width of propagating transients. Finally, based on our measured data, the threshold LET and the critical transient width for unattenuated propagation are calculated for both bulk and floating body SOI as a function of technology scaling. We show that the threshold LETs and the critical transient widths for bulk and floating body SOI devices are similar. Body ties can be used to harden SOI ICs to digital SET. However, the primary advantage of SOI technologies, even with a floating body design, mostly lies in shorter transients, at a given ion LET, for SOI technologies than for bulk technologies

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a0d317e4b65c8bc51c8c426e06c905d1be9396b0

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In Electrical and Electronic Engineering

Citations in the corpus

Single Event Transients in Digital CMOS—A Review (2013, methodology): “Mixed-mode simulations from [17] and SET measurements from [34] are superimposed.”
New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening (2007, background): “The SET width for the four chains is estimated from the current pulse duration at the level [9].”
Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors (2013, background): “so for FD SOI transistors [80], especially those designed with”
Current and Future Challenges in Radiation Effects on CMOS Electronics (2010, methodology): “Critical DSET width for unattenuated propagation as a function of technology scaling [61].”
Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies (2007, background): “The results presented here correlate well with the distribution observed in [13] where direct measurement of the charge collected by a circuit node after a hit is presented.”