Radiation Effects in MOS Oxides

By J. Schwank, M. Shaneyfelt, D. M. Fleetwood, J. Felix, Paul E. Dodd, P. Paillet, V. Ferlet-Cavrois. IEEE Transactions on Nuclear Science, 2008

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Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors (2013, background): “Even if one can expect a similar TID response than for planar bulk MOSFETs, the particular FinFET architecture may reveal unintended behaviors linked to the narrowness of bulk FinFET devices.”
Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018, background): “The stronger electric field in the gate oxide promotes separation of X-ray generated e–h pairs [5], [8], [39], [40], [163] and more rapid sweeping out of electrons,”
Present and Future Non-Volatile Memories for Space (2010, background): “36) as a shift of the hysteresis loop towards lower (higher) voltages, if the ferroelectric capacitor is exposed to TID with a positive (negative) applied bias.”
An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs (2013, background): “For example, TID effects that cause inversion of the channel essentially turning the device on while under an off-state bias would produce a drastic increase in drain current [96], which could damage the device producing a signature response similar to that of SEB.”