Lloyd W. Massengill

Electrical and Electronic Engineering · 2002–2013

A researcher in the Science corpus: 12 papers; trusts 6 researchers and is trusted by 9 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 33 citations into it; #3,058 of 16,539 by trust here, #6,224 by citations
• Hardware and Architecture — 11 citations into it; #437 of 1,551 by trust here, #494 by citations

Whom Lloyd W. Massengill trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Paul E. Dodd
2. Norbert Seifert
3. Kartik Mohanram
4. M. Shaneyfelt

Who trusts Lloyd W. Massengill overall

1. Véronique Ferlet-Cavrois
2. R. Lacoe
3. Paul E. Dodd
4. Jeffrey D. Black
5. Robert C. Baumann

Papers from Lloyd W. Massengill's perspective

Ordered by how strongly the researchers Lloyd W. Massengill trusts endorse each paper. Same corpus, a different order for every researcher.

1. Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs (IEEE Transactions on Nuclear Science)
2. Heavy ion-induced digital single-event transients in deep submicron Processes (IEEE Transactions on Nuclear Science)
3. Production and propagation of single-event transients in high-speed digital logic ICs (IEEE Transactions on Nuclear Science)
4. On-Chip Characterization of Single-Event Transient Pulsewidths (IEEE transactions on device and materials reliability)
5. Impact of CMOS technology scaling on the atmospheric neutron soft error rate
6. Basic mechanisms and modeling of single-event upset in digital microelectronics
7. Soft error rate mitigation techniques for modern microcircuits (2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320))
8. The impact of technology scaling on soft error rate performance and limits to the efficacy of error correction (Digest. International Electron Devices Meeting,)
9. SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments
10. Charge Collection and Charge Sharing in a 130 nm CMOS Technology (IEEE Transactions on Nuclear Science)

Their papers

• Basic mechanisms and modeling of single-event upset in digital microelectronics (2003) — 1,189 citations
• The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM (2005) — 166 citations
• On-Chip Characterization of Single-Event Transient Pulsewidths (2006) — 133 citations
• Impact of scaling on soft-error rates in commercial microprocessors (2002) — 178 citations
• Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design (2005) — 163 citations
• Charge Collection and Charge Sharing in a 130 nm CMOS Technology (2006) — 397 citations
• RHBD techniques for mitigating effects of single-event hits using guard-gates (2005) — 145 citations
• A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit (2009) — 160 citations
• Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits (2009) — 155 citations
• Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies (2007) — 184 citations
• Monte Carlo Simulation of Single Event Effects (2010) — 229 citations
• Single Event Transients in Digital CMOS—A Review (2013) — 372 citations