The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

By K. Warren, R. Weller, M. Mendenhall, R. Reed, D. Ball, C. L. Howe, B. Olson, M. Alles, Lloyd W. Massengill, peixiong zhao and 5 more. IEEE Transactions on Nuclear Science, 2005

166 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d81a0bfcae5990b22c06479d74fa141ef3281756

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In Electrical and Electronic Engineering

Citations in the corpus

Monte Carlo Simulation of Single Event Effects (2010, methodology): “In fact, such an observation, described in [18], was historically the first documented case of a total breakdown of the assumptions surrounding simple LET-based charge deposition that are so fundamental to classical error rate methods.”
Current and Future Challenges in Radiation Effects on CMOS Electronics (2010, background): “Accurate error rate predictions for ICs with significant heavy ion nuclear interaction effects will require extensive experimental characterization at multiple energies, as well as detailed nuclear physics calculations to determine secondary particle distributions [88], [91], [92].”
Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology (2008, methodology): “Recent results [62] suggest that this assumption may not be valid, and that nuclear reactions and recoils from relatively light heavy ions can be important in determining the upset cross-section at lower LET values.”
Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions (2009, methodology): “[6] in constructing a single sensitive volume model for subthreshold heavy ion data and predicting the high-energy proton response with GEANT4.”