Simone Gerardin

Electrical and Electronic Engineering · 2010–2013

A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

Whom Simone Gerardin trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. A. Sawa
  2. Paul E. Dodd
  3. J. Campbell Scott
  4. G. Cross
  5. Michael N. Kozicki

Who trusts Simone Gerardin overall

  1. D. Fleetwood

Papers from Simone Gerardin's perspective

Ordered by how strongly the researchers Simone Gerardin trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Flash EEPROM threshold instabilities due to charge trapping during program/erase cycling (IEEE transactions on device and materials reliability)
  2. Phase-change random access memory: A scalable technology (IBM Journal of Research and Development)
  3. Basic mechanisms and modeling of single-event upset in digital microelectronics
  4. NROM: A novel localized trapping, 2-bit nonvolatile memory cell (IEEE Electron Device Letters)
  5. Nanoscale memory elements based on solid-state electrolytes (IEEE transactions on nanotechnology)
  6. Ferroelectric thin films: Review of materials, properties, and applications
  7. A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  8. Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  9. The "millipede" - nanotechnology entering data storage
  10. Polymer electronic memories: Materials, devices and mechanisms

Their papers