On-Chip Characterization of Single-Event Transient Pulsewidths
By B. Narasimham, Vishwa Ramachandran, B. Bhuva, peixiong zhao, A. Witulski, W. T. Holman, Lloyd W. Massengill, J. D. Black, William H. Robinson, Dale McMorrow. IEEE transactions on device and materials reliability, 2006
133 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/6641617b3036888c7943ddd634b2119a899eb0cd
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In Electrical and Electronic Engineering
- Lloyd W. Massengill
- Pascale Gouker
- Véronique Ferlet-Cavrois
- Paul E. Dodd
- M. Shaneyfelt
- J. Schwank
- J. Felix
- D. Fleetwood
Citations in the corpus
- Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies (2007, unknown): “The results presented here use the on-chip, autonomous SET pulse characterization technique of [14] to measure the distribution of SET pulse-widths accurately in commercial 130-nm and 90-nm CMOS technologies fabricated through the MOSIS foundry system.”
- New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening (2007, background): “It is possible that the chain output load, introduced by the presence of the buffer stage in our test structures, or by any other SET detection circuit used in other works [2]–[8], might participate to the PIPB effect.”
- Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits (2009, methodology): “The test chip design was based on the autonomous pulsewidth measurement technique described in [ 16 ] and contained two variants of otherwise identical target inverter chains—with and without guard bands.”
- Single Event Transients in Digital CMOS—A Review (2013, methodology): “This technique [93] has been successfully used in a number of studies”