Production and propagation of single-event transients in high-speed digital logic ICs
By Paul E. Dodd, M. Shaneyfelt, J. Felix, J. Schwank. IEEE Transactions on Nuclear Science, 2004
339 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/983952c604b26fdaf59d32877407871860a2cbd4
How researchers see this paper
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In Electrical and Electronic Engineering
- D. Fleetwood
- Lloyd W. Massengill
- Pascale Gouker
- Véronique Ferlet-Cavrois
- Paul E. Dodd
- M. Shaneyfelt
- J. Schwank
- J. Felix
Citations in the corpus
- Single Event Transients in Digital CMOS—A Review (2013, methodology): “” This analysis was confirmed by both mixed-mode simulations [17]”
- New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening (2007, methodology): “This result is consistent with the experimental results presented here, and also with the simulations in [15], and confirms that transients generated in SOI inverters are very short, with a width less than 200 ps.”
- Digital Single Event Transient Trends With Technology Node Scaling (2006, neutral): “(CMOS) integrated circuit (IC) devices [1]–[5].”
- Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs (2006, methodology): “Although this paper is mainly based on experiments, we also performed device and circuit simulations to further investigate SET sensitivity and to compare our data with the results of previous works [8], [9].”
- Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors (2013, methodology): “Simulated critical LET for unattenuated transient propagation of SETs in an inverter chain and SEU threshold LET as a function of scaling for SOI CMOS technologies from [69] and [106].”
- Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits (2009, methodology): “SET pulsewidth versus LET compiled from previous measurements [2], [5], [7], [8] and simulations [6].”
- Current and Future Challenges in Radiation Effects on CMOS Electronics (2010, methodology): “18- m bulk CMOS 10-inverter chain [57].”