New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening
By V. Ferlet-Cavrois, P. Paillet, D. McMorrow, N. Fel, J. Baggio, Sylvain Girard, O. Duhamel, J. Melinger, M. Gaillardin, J. Schwank and 3 more. IEEE Transactions on Nuclear Science, 2007
138 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/39b23222eed530331af213e74e6be364efdf56a0
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- D. Fleetwood
- Lloyd W. Massengill
- Pascale Gouker
- Véronique Ferlet-Cavrois
- Paul E. Dodd
- M. Shaneyfelt
- J. Schwank
- J. Felix
Citations in the corpus
- Single Event Transients in Digital CMOS—A Review (2013, methodology): “Unpublished results; the tested gate chains were processed with the 130-nm SOI technology described in [41], [42].”
- Current and Future Challenges in Radiation Effects on CMOS Electronics (2010, background): “This led to a flurry of activity aimed at measuring DSETs and the creation of many novel and clever DSET measurement techniques and test structures [62]–[65].”
- Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors (2013, methodology): “Such a mixed-mode simulation approach was performed in [69] for various advanced technologies that resulted in a SEU and SET threshold LET decrease for upsetting an SRAM cell and propagating SETs in digital circuits designed in a 50 nm CMOS technology, respectively (Fig.”