Radiation effects in SOI technologies

By J. Schwank, V. Ferlet-Cavrois, M. Shaneyfelt, P. Paillet, Paul E. Dodd. 2003

429 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/482cf5e75971733f43ab9f27edc271e797bbe23a

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In Electrical and Electronic Engineering

1. D. Fleetwood

Citations in the corpus

• Total ionizing dose effects in MOS oxides and devices (2003, background): “We will not discuss these topics here because they are covered in detail in other papers in this issue [129], [130].”
• Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018, background): “In addition, alternative semiconductor and/or channel technologies to Si are of increasing interest [12]–[15], again complicating MOS radiation response.”
• Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors (2013, background): “As stated in Section III-A, charge trapping in the BOX of planar FD SOI devices can affect the main transistor through direct coupling effects between the front and back interface [19], [23], [25], [29], [32].”