Current and Future Challenges in Radiation Effects on CMOS Electronics

By Paul E. Dodd, M. Shaneyfelt, J. Schwank, J. Felix. IEEE Transactions on Nuclear Science, 2010

355 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f06df1ecae250cba4ac17804eff66ebb3ef26aa8

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In Electrical and Electronic Engineering

1. D. Fleetwood

Citations in the corpus

• Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018, methodology): “factors influence charge trapping in isolation oxides and its coupling to MOS transistors, devices can still fail at low doses due to TID-induced leakage currents [6], [79]–[83], unless special design and/or process techniques are”