William G. Vandenberghe
Materials Chemistry · 2007–2018
A researcher in the Science corpus: 7 papers; trusts 6 researchers and is trusted by 3 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 27 citations into it
- Atomic and Molecular Physics, and Optics — 11 citations into it
Whom William G. Vandenberghe trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts William G. Vandenberghe overall
Papers from William G. Vandenberghe's perspective
Ordered by how strongly the researchers William G. Vandenberghe trusts endorse each paper. Same corpus, a different order for every researcher.
- Germanium-source tunnel field effect transistors with record high ION/IOFF (Symposium on VLSI Technology)
- Tunnel field-effect transistor without gate-drain overlap
- Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
- Analysis of the parasitic S/D resistance in multiple-gate FETs (IEEE Transactions on Electron Devices)
- Si tunnel transistors with a novel silicided source and 46mV/dec swing (Symposium on VLSI Technology)
- Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires
- Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs (IEEE Transactions on Electron Devices)
- Semiempirical GGA‐type density functional constructed with a long‐range dispersion correction (Journal of Computational Chemistry)
- The electronic properties of graphene (Reviews of Modern Physics)
- Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal (Nature Materials)
Their papers
- Tunnel field-effect transistor without gate-drain overlap (2007) — 423 citations
- Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates (2008) — 174 citations
- Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization (2008) — 142 citations
- Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor (2010) — 238 citations
- Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs (2012) — 418 citations
- Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk (2018) — 893 citations
- Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets (2012) — 135 citations