Qin Zhang

Electrical and Electronic Engineering · Proceedings of the IEEE · 2008–2012

A researcher in the Science corpus: 4 papers; trusts 6 researchers and is trusted by 4 researchers here, as inferred from the citation graph.

Subfields

Whom Qin Zhang trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Joachim Knoch
  2. Yasin Khatami
  3. Joerg Appenzeller
  4. Adelmo Ortiz-Conde
  5. Kaustav Banerjee

Who trusts Qin Zhang overall

  1. D. Abdi
  2. Dmitri E. Nikonov

Papers from Qin Zhang's perspective

Ordered by how strongly the researchers Qin Zhang trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer
  2. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (IEEE Electron Device Letters)
  3. Band-to-band tunneling in carbon nanotube field-effect transistors. (Physical Review Letters)
  4. Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
  5. A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
  6. Tunneling phenomena in carbon nanotube field‐effect transistors
  7. Spin qubits in graphene quantum dots
  8. Carrier statistics and quantum capacitance of graphene sheets and ribbons
  9. Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits (IEEE Transactions on Electron Devices)
  10. Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors. (Physical Review Letters)

Their papers