Silicon nanowire tunneling field-effect transistors

By M. Björk, Joachim Knoch, H. Schmid, Heike E. Riel, W. Riess. 2008

186 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/be70d6cc4b0dc9c386ab2a0435e5868e0c6c0591

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. J. Wallentin
2. Magnus Borgström

In Electrical and Electronic Engineering

1. Magnus Borgström
2. J. Wallentin
3. Bahniman Ghosh
4. M. Akram

Citations in the corpus

• Junctionless Tunnel Field Effect Transistor (2013, background): “The most commonly reported alternative transistors are tunnel field effect transistor (TFET) [6]–[7] and impact ionization metal oxide semiconductor (IMOS) transistors [8]–[9].”
• Doping of semiconductor nanowires (2011, background): “Although an accurate determination of doping levels is challenging, as will be discussed in chapter 6, indirect evidence of high doping can be found in the performance of devices such as tunnel diodes [99] and tunnel-FETs [111], as well as the nano-sized ohmic contacts formed to many NWs.”