AlGaN/GaN current aperture vertical electron transistors with regrown channels

By I. Ben-Yaacov, Yee-Kwang Seck, Umesh K. Mishra, Steven P. DenBaars. 2004

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Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer (2008, background): “922982 been successfully demonstrated [3], a great deal of effort is needed in material growth, device design, processing, and”
CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion (2012, background): “transistors, such as the current-aperture vertical electron transistors (CAVETs) [7], [8], for high-power applications have been successfully demonstrated, a great deal of effort is needed in”
Gallium nitride devices for power electronic applications (2013, methodology): “Despite this limitation, vertical FET structures have been reported on GaN substrates using a ‘current aperture vertical electron transistor (CAVET) structure’ [21, 22].”
Materials and processing issues in vertical GaN power electronics (2017, background): “Another critical issue related to the original CAVET structure is its intrinsic normally-on operation and poor pinch-off capability [38,46].”
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates (2017, background): “In addition, because of the polarization in AlGaN/GaN hetero-structures, the CAVET also has problems to achieve enhancement-mode (e-mode) operation.”