Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

By Srabanti Chowdhury, B. Swenson, Man Hoi Wong, Umesh K. Mishra. 2013

144 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/4ede6a980f71a171a08d35ee416db5c01d09416b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Tomás Palacios
2. Yuhao Zhang
3. Xiang Gao
4. Min-Chul Sun

In Electrical and Electronic Engineering

1. Tomás Palacios
2. Yuhao Zhang
3. Min-Chul Sun

In Electronic, Optical and Magnetic Materials

1. Xiang Gao
2. Tomás Palacios
3. Min-Chul Sun
4. Yuhao Zhang

Citations in the corpus

• High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates (2017, background): “layer (CBL), critical for high blocking voltages, is very challenging to grow [14].”