A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

By M. Kanechika, M. Sugimoto, N. Soejima, H. Ueda, O. Ishiguro, M. Kodama, E. Hayashi, K. Itoh, T. Uesugi, Tetsu Kachi. 2007

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Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer (2008, methodology): “as a CBL in CAVETs and vertical FETs [4].”
GaN Power Transistors on Si Substrates for Switching Applications (2010, unknown): “Toyota reported vertical structures combined with regrown p-typed GaN in order to confine the vertical current [ 15 ].”
Gallium nitride devices for power electronic applications (2013, methodology): “Despite this limitation, vertical FET structures have been reported on GaN substrates using a ‘current aperture vertical electron transistor (CAVET) structure’ [21, 22].”
CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion (2012, background): “transistors, such as the current-aperture vertical electron transistors (CAVETs) [7], [8], for high-power applications have been successfully demonstrated, a great deal of effort is needed in”
Vertical Power p-n Diodes Based on Bulk GaN (2015, background): “The GaN p-n junction serves as a basic building block for most (if not all) high voltage (BV > 600 V) GaN vertical transistors [18]–[22].”
Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “transistor [196]–[198], and the initial Si vertical double-diffused MOSFET [199].”