Semiconductor Material and Device Characterization, 3rd Edition

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Monolithic Perovskite Tandem Solar Cells: A Review of the Present Status and Advanced Characterization Methods Toward 30% Efficiency (2020, background): “, as transport layers.[224] When the film thickness t is unknown, a sheet resistance Rs = ρ/t, in units Ω sq−1, is reported.”
Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress (2016, methodology): “As widely used for gate oxide reliability investigations in Si MOSFETs [10]–[12] and recently adopted also for GaN based devices [9], [13], tB D distribution can be described by Weibull statistics.”
Silicon surface passivation by atomic layer deposited Al2O3 (2008, unknown): “It can clearly be seen that the ﬂatband voltage, which is related to the ﬁxed charge density in the Al 2 O 3 , 55 is signiﬁcantly different for the two ﬁlms.”