Oliver Hilt

IEEE Transactions on Electron Devices · 2008–2017

A researcher in the Science corpus: 7 papers; trusts 0 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Whom Oliver Hilt trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Dieter K. Schroder

Papers from Oliver Hilt's perspective

Ordered by how strongly the researchers Oliver Hilt trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)
  2. Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
  3. Carbon impurities and the yellow luminescence in GaN
  4. Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics (IEEE Electron Device Letters)
  5. Punch-through in short-channel AlGaN/GaN HFETs (IEEE Transactions on Electron Devices)
  6. AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (IEEE Transactions on Electron Devices)
  7. 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors (Applied Power Electronics Conference)
  8. Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain (International Symposium on Power Semiconductor Devices and IC's)
  9. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
  10. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (IEEE Transactions on Electron Devices)

Their papers