The negative bias temperature instability in MOS devices: A review

By James H. Stathis, Sufi Zafar. Microelectronics and reliability, 2006

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Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability (2019, background): “However, the spectroscopy of individual defects (see NBTI literature [41], [62]) has shown that “slow” defects do not necessarily have a “deep” energy or are deep in the oxide.”
Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks (2009, background): “Several recent review articles cover various reliability issues [ 6 ]‐[9].”
Negative bias temperature instability: What do we understand? (2007, methodology): “In this paper, I will draw upon the excellent recent reviews by Stathis and Zafar [3], Huard et al.”
Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements (2006, background): “A review of most NBTI studies can be found in [7].”
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress (2010, background): “30 years of research [1] still did not bring about any consensus regarding the physical origin of NBTI.”