Jan Kuzmik
Condensed Matter Physics · 2001–2016
A researcher in the Science corpus: 6 papers; trusts 2 researchers and is trusted by 13 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 18 citations into it; #206 of 1,948 by trust here, #629 by citations
- Atomic and Molecular Physics, and Optics — 7 citations into it
Whom Jan Kuzmik trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Jan Kuzmik overall
- Dong Seup Lee
- Xiang Gao
- Aristotelis E. Kostopoulos
- Jean-Francois Carlin
- Shiping Guo
- George Konstantinidis
- M. Gonschorek
- Tetsu Kachi
- B. Baliga
- Tomás Palacios
Papers from Jan Kuzmik's perspective
Ordered by how strongly the researchers Jan Kuzmik trusts endorse each paper. Same corpus, a different order for every researcher.
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method
- InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal
- Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
- Mechanism of anomalous current transport in n-type GaN Schottky contacts
- Current instabilities in GaN-based devices (IEEE Electron Device Letters)
- Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)
- Semiconductor Material and Device Characterization, 3rd Edition
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)
- High breakdown GaN HEMT with overlapping gate structure (IEEE Electron Device Letters)
Their papers
- InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal (2002) — 143 citations
- Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress (2016) — 146 citations
- Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method (2002) — 204 citations
- A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors (2012) — 144 citations
- InAlN/GaN HEMTs: a first insight into technological optimization (2006) — 141 citations
- Power electronics on InAlN/(In)GaN: Prospect for a record performance (2001) — 562 citations