Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors

By M. Ershov, S. Saxena, H. Karbasi, S. Winters, S. Minehane, J. Babcock, R. Lindley, P. Clifton, M. Redford, A. Shibkov. 2003

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A comprehensive model for PMOS NBTI degradation: Recent progress (2007, background): “Hypothesis of ‘saturation due to measurement delay’ It is well-known that NIT generated during the stress phase of the degradation recovers as soon as the stress is removed [6,8,17,18].”
Negative bias temperature instability: What do we understand? (2007, background): “If Dit hardly recovers, does that imply that hydrogen does not diffuse back to the SiO2/Si substrate interface during recovery? NBTI recovery leads to less severe device/circuit degradation under ac operation compared to dc and depends on the gate voltage duty cycle [21].”
The negative bias temperature instability in MOS devices: A review (2006, unknown): “After [28].”
On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress (2006, background): “following; 1) a mix of H2 and H species; 2) H species plus dispersive transport; and 3) H2 species plus recovery due to measurement delay [14], [15].”