Dynamic NBTI of PMOS transistors and its impact on device lifetime

By Chen Gang, K. Y. Chuah, Meng Li, D. Chan, C. Ang, Jiachun Zheng, Yunye Jin, Dim-Lee Kwong. 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual., 2003

200 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5298d50747f4695f9413080f75ea6bb3b0be321e

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In Electrical and Electronic Engineering

Citations in the corpus

A comprehensive model of PMOS NBTI degradation (2005, result): “Fig. 4. The R–D model is solved numerically for two cycles of interrupted stress (stress 1000 s, relaxation 1000 s). The simulation results (continuous line) agree well with measured data (symbols) [ 21 ].”
Ubiquitous relaxation in BTI stressing—New evaluation and insights (2008, background): “The ΔVth relaxation is typically observed to span many decades in time, from microseconds or possibly less [2,3] to days (Fig. 1) [ 4-6 ] indicating an underlying dispersive mechanism [7].”
Circuit Failure Prediction and Its Application to Transistor Aging (2007, background): “This problem became significant at 90nm technology node [Agostinelli 05, Chen 03, Reddy 02, Schroder 03], and is expected to get significantly 25th IEEE VLSI Test Symmposium (VTS'07) 0-7695-2812-0/07 $20.00 © 2007 worse in future generations [Massey 04, McPherson 06, Reddy 02].”
Predictive Modeling of the NBTI Effect for Reliable Design (2006, background): “However, the experimental data [2] suggests that the threshold voltage degradation at high frequencies is independent of the frequency.”
Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs (2004, background): “4) anneals significantly once the stress is removed [14]–[17];”