Physical mechanisms of negative-bias temperature instability

By L. Tsetseris, X. Zhou, D. Fleetwood, peixiong zhao, S. Pantelides. 2005

134 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e68e596b5dd2f0c66a020958487d9629b71d3702

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. M. A. Alam
2. Haldun Kufluoglu
3. James H. Stathis
4. Souvik Mahapatra
5. A. E. Islam
6. Sufi Zafar

In Electrical and Electronic Engineering

1. James H. Stathis
2. Sufi Zafar
3. Haldun Kufluoglu
4. Dhanoop Varghese
5. Souvik Mahapatra
6. M. A. Alam
7. A. E. Islam
8. Dieter K. Schroder

Citations in the corpus

• The negative bias temperature instability in MOS devices: A review (2006, background): “[50,63] Si–H + h M Si + H [61,63] Si–H þ hþ $ Si þ þ 2H2 [63] Si–H + hMSi +H [63,78] Si–H + H M Si + + H2”
• Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation (2007, methodology): “However, the calculation in [42] suggests a reduction in Si–H dissociation energy with hole capture, which is used in our field model.”
• A comprehensive model for PMOS NBTI degradation: Recent progress (2007, background): “Since the original R–D analysis of NBTI [1] did not address these post-2003 issues, there is an incorrect presumption that these new features are incompatible with the R–D model and must be interpreted with new models of NBTI [5,20,21].”