Tsunenobu Kimoto
Electrical and Electronic Engineering · 2004–2020
A researcher in the Science corpus: 13 papers; trusts 6 researchers and is trusted by 12 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 126 citations into it; #3,595 of 16,539 by trust here, #5,345 by citations
- Electronic, Optical and Magnetic Materials — 17 citations into it
- Condensed Matter Physics — 14 citations into it
Whom Tsunenobu Kimoto trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Tsunenobu Kimoto overall
Papers from Tsunenobu Kimoto's perspective
Ordered by how strongly the researchers Tsunenobu Kimoto trusts endorse each paper. Same corpus, a different order for every researcher.
- An assessment of wide bandgap semiconductors for power devices
- SiC power diodes provide breakthrough performance for a wide range of applications
- Fundamentals of Power Semiconductor Devices
- SiC power-switching devices-the second electronics revolution? (Proceedings of the IEEE)
- 1800 V NPN bipolar junction transistors in 4H-SiC (IEEE Electron Device Letters)
- Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide (IEEE Electron Device Letters)
- Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
- Semiconductor Power Devices: Physics, Characteristics, Reliability
- Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
- N2O Processing Improves the 4H-SiC:SiO2 Interface
Their papers
- Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications (2014) — 1,140 citations
- Power Conversion With SiC Devices at Extremely High Ambient Temperatures (2007) — 336 citations
- Material science and device physics in SiC technology for high-voltage power devices (2015) — 869 citations
- Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N2O Oxidation (2005) — 182 citations
- Defect engineering in SiC technology for high-voltage power devices (2020) — 268 citations
- Bulk and epitaxial growth of silicon carbide (2016) — 180 citations
- Generation of very fast states by nitridation of the SiO[2]/SiC interface (2012) — 165 citations
- Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance (2012) — 137 citations
- Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation (2009) — 166 citations
- Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation (2007) — 199 citations
- Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons (2006) — 162 citations
- Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes (2005) — 149 citations
- Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001) (2004) — 163 citations