Material science and device physics in SiC technology for high-voltage power devices
By Tsunenobu Kimoto. 2015
869 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/f7cdfe28fc284821f36fb25d454695a75afb5a3b
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “Further device optimization could be inspired by the commercial SiC double-implanted MOSFET [99], [195], the evolving GaN current aperture vertical electron”