Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N2O Oxidation

By Tsunenobu Kimoto, Y. Kanzaki, M. Noborio, H. Kawano, H. Matsunami. 2005

182 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/309dccb4a5b8e1ba11747be689e666ac429aef6b

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In Electrical and Electronic Engineering

1. Thomas Aichinger

Citations in the corpus

• Performance and ruggedness of 1200V SiC — Trench — MOSFET (2017, methodology): “by nitridation techniques using nitric oxide or nonplanar structures [3],[4].”