1800 V NPN bipolar junction transistors in 4H-SiC

By S. Ryu, Anant K. Agarwal, Ranbir Singh, J. Palmour. IEEE Electron Device Letters, 2001

158 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/87b883cd2f61cc4b42e6f7909933f30028fc8963

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. James A. Cooper
2. Anant K. Agarwal

In Electrical and Electronic Engineering

1. James A. Cooper
2. Anant K. Agarwal
3. Tsunenobu Kimoto

Citations in the corpus

• SiC power-switching devices-the second electronics revolution? (2002, methodology): “Since that time, a wide variety of SiC power transistors have been developed, including planar double-implanted MOSFETs (DMOSFETs) [18], junction FETs (JFETs) [19], BJTs [ 4 ], and IGBTs [20].”