Generation of very fast states by nitridation of the SiO[2]/SiC interface

By H. Yoshioka, Takashi Nakamura, Tsunenobu Kimoto. 2012

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Fast states at SiO2/SiC interfaces annealed in NO at 1150–1350 °C have been investigated. The response frequency of the interface states was measured by the conductance method with a maximum frequency of 100 MHz. The interface state density was evaluated based on the difference between quasi-static and theoretical capacitances (C−ψS method). Very fast states, which are not observed in as-oxidized samples, were generated by NO annealing, while states existing at an as-oxidized interface decreased by approximately 90%. The response frequency of the very fast states was higher than 1 MHz and increased when the energy level approaches the conduction band edge. For example, the response frequency (time) was 100 MHz (5 ns) at EC−ET = 0.4 eV and room temperature. The SiO2/SiC interface annealed in NO at 1250 °C showed the lowest interface state density, and NO annealing at a temperature higher than 1250 °C is not effective because of the increase in the very fast states.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/268b5cdbdf107d3d6b15cc591d70c8acf00e453d