Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
By G. Chung, C. Tin, John R. Williams, K. McDonald, M. Di Ventra, S. Pantelides, L. Feldman, R. Weller. 2000
403 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/2f050faa5f64066600bb5cdb95ede4f395ed99fb
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In Electrical and Electronic Engineering
Citations in the corpus
- Silica on Silicon Carbide (2008, background): “For this reason we omit a detailed discussion of the other two minor contributions, Si-Si-bonds 313 and stacking-fault related electrically active centers.”
- Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide (2001, background): “We have recently annealed wet oxides in NO [8] and found that the interface state density near the conduction band edge in n-4H-SiC can be reduced to levels comparable to the interface state density near the conduction band edge in 6H-SiC.”