Heiji Watanabe
Electrical and Electronic Engineering · 2020
A researcher in the Science corpus: 1 paper; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 59 citations into it
- Atomic and Molecular Physics, and Optics — 13 citations into it
Whom Heiji Watanabe trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Heiji Watanabe's perspective
Ordered by how strongly the researchers Heiji Watanabe trusts endorse each paper. Same corpus, a different order for every researcher.
- Fundamentals of Power Semiconductor Devices
- SiC power diodes provide breakthrough performance for a wide range of applications
- An assessment of wide bandgap semiconductors for power devices
- Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide (IEEE Electron Device Letters)
- SiC power-switching devices-the second electronics revolution? (Proceedings of the IEEE)
- Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
- Semiconductor Power Devices: Physics, Characteristics, Reliability
- N2O Processing Improves the 4H-SiC:SiO2 Interface
- 1800 V NPN bipolar junction transistors in 4H-SiC (IEEE Electron Device Letters)
- High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy
Their papers
- Defect engineering in SiC technology for high-voltage power devices (2020) — 268 citations