SiC power-switching devices-the second electronics revolution?

By James A. Cooper, Anant K. Agarwal. Proceedings of the IEEE, 2002

363 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/933d5bb2094cf03f665e8ca481f5a53f3108a7b8

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In Electrical and Electronic Engineering

1. Zheng Chen

Citations in the corpus

• Review and analysis of SiC MOSFETs’ ruggedness and reliability (2020, background): “In normal converter operation, the junction temperature of the device would fluctuate when the load condition or environmental condition varies, which may induce reliability issues of chips or packages [73].”
• High-temperature electronics - a role for wide bandgap semiconductors? (2002, background): “As discussed in [9], [13], [60], and [61], much lighter doping ( ) and much larger depletion width () are required for a junction to block higher voltage.”
• Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements (2008, background): “ILICON carbide (SiC) has many potential material advantages over silicon (Si) for the development of hightemperature, high-voltage, and high-frequency power switches, including a much wider bandgap, a far higher critical field, a larger saturation velocity, and a much greater thermal conductivity [ ”