N2O Processing Improves the 4H-SiC:SiO2 Interface

By L. Lipkin, M. Das, J. Palmour. 2002

165 citations recorded by the source corpus.

Subfields: Ceramics and Composites, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1a47e56484aca105e2927db1854158c8cba71039

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In Electrical and Electronic Engineering

1. T. Paul Chow
2. Zheng Chen

Citations in the corpus

• Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements (2008, background): “However, it is well known that the NO anneal reduces measured interface traps as well [7]–[9].”
• Silicon carbide benefits and advantages for power electronics circuits and systems (2002, background): “Despite the continuing improvement of SiC MOS interfacial parameters (to, at present, for 4H‐SiC, a fixed oxide charge density close to 10 /cm and an interface state density 10 /eV-cm at - of 0.6 eV [47]‐[ 49 ]), the correlation between surface state densities with inversion layer mobility is weak.”