An assessment of wide bandgap semiconductors for power devices

By Jerry L. Hudgins, G. Simin, E. Santi, M. Khan. 2003

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Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models (2006, background): “The second way is based on the relation between the doping concentration and the breakdown voltage [25] using”
Comprehensive Topological Analysis of Conductive and Inductive Charging Solutions for Plug-In Electric Vehicles (2012, background): “Si, SiC, and GaN materials that impact the PEV charger are summarized in Table VIII [61]–[64].”
A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices (2014, background): “thermal expansion (CTE) makes the packaging of SiC power devices more reliable across a wide range of temperatures [7].”
Power Conversion With SiC Devices at Extremely High Ambient Temperatures (2007, background): “SILICON CARBIDE (SiC) has several superior characteristics over silicon (Si) when used as a semiconductor material [1]–[6].”
Die Attach Materials for High Temperature Applications: A Review (2011, background): “First, the material and device fabrication technology is much less mature and developed than for SiC and GaN [7].”
New unipolar switching power device figures of merit (2004, methodology): “The semiconductor material data are obtained from [6].”