Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

By H. Fujiwara, Tsunenobu Kimoto, T. Tojo, H. Matsunami. 2005

149 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3cffba5c628ce2c4be844672c06caaa846ebb18f