Anant K. Agarwal

IEEE Electron Device Letters · 2000–2007

A researcher in the Science corpus: 7 papers; trusts 0 researchers and is trusted by 3 researchers here, as inferred from the citation graph.

Who trusts Anant K. Agarwal overall

1. Zheng Chen
2. Tsunenobu Kimoto
3. James A. Cooper

Papers from Anant K. Agarwal's perspective

Ordered by how strongly the researchers Anant K. Agarwal trusts endorse each paper. Same corpus, a different order for every researcher.

1. Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
2. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
3. Degradation of hexagonal silicon-carbide-based bipolar devices
4. Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
5. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide (IEEE Electron Device Letters)
6. 1800 V NPN bipolar junction transistors in 4H-SiC (IEEE Electron Device Letters)
7. Fundamentals of Power Semiconductor Devices
8. Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
9. A Review of the State of the Art of Power Electronics for Wind Turbines (IEEE transactions on power electronics)
10. Microgrids And Distributed Generation (Intelligent Automation and Soft Computing)

Their papers

• Status and prospects for SiC power MOSFETs (2002) — 489 citations
• 1800 V NPN bipolar junction transistors in 4H-SiC (2001) — 158 citations
• A New Degradation Mechanism in High-Voltage SiC Power MOSFETs (2007) — 258 citations
• Interface trap profile near the band edges at the 4H-SiC/SiO2 interface (2000) — 165 citations
• Advances in silicon carbide processing and applications (2004) — 329 citations
• SiC power-switching devices-the second electronics revolution? (2002) — 363 citations
• Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC (2000) — 151 citations