Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

By K. Danno, D. Nakamura, Tsunenobu Kimoto. 2007

199 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/48568e21c559fe23ba5af5972fde92e9cbc6d5ff

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In Atomic and Molecular Physics, and Optics

1. Stefania Castelletto

Citations in the corpus

• Silicon carbide color centers for quantum applications (2020, background): “The C vacancy is the main intrinsic defect in CVD-grown epitaxial layers, with a minimum concentration of around ~10(13) cm [99].”