Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

By Toru Hiyoshi, Tsunenobu Kimoto. 2009

166 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1bb2ecc726a5e36e496f9d3dc4ccfc541b950dba