SiC power diodes provide breakthrough performance for a wide range of applications

By A. Hefner, Ranbir Singh, Jih-Sheng, D. Berning, S. Bouché, C. Chapuy. 2001

183 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6a56fb5b202eba68d6074bd6f37e6acf36453841

How researchers see this paper

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In Electrical and Electronic Engineering

1. Tsunenobu Kimoto
2. H. Mantooth

Citations in the corpus

• A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices (2014, background): “The high breakdown electric field of SiC allows for the voltage blocking layers to be designed such that an approximately 100× advantage in onstate resistance over Si can be achieved [5].”
• Power Conversion With SiC Devices at Extremely High Ambient Temperatures (2007, background): “The displacement current, which charges the capacitance between the anode and cathode of the diode, then becomes predominant [1], [3].”