Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

By H. Yoshioka, Takashi Nakamura, Tsunenobu Kimoto. 2012

137 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/977672e95e04dbc9abc0b91a1a3ded560caa9068