Power Conversion With SiC Devices at Extremely High Ambient Temperatures

By Tsuyoshi Funaki, J. Balda, J. Junghans, A. Kashyap, H. Mantooth, F. Barlow, Tsunenobu Kimoto, T. Hikihara. IEEE transactions on power electronics, 2007

336 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/da3031c265a8ffcd25b3f9e499a5f8b60761da0a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Leon M. Tolbert
2. Fei Fred Wang
3. Shuo Wang
4. Boyi Zhang
5. Zhong Du
6. Keith McKenzie
7. John N. Chiasson

Citations in the corpus

• Improving SiC JFET Switching Behavior Under Influence of Circuit Parasitics (2012, background): “The switching speed can be intentionally reduced to cope with parasitic ringing [10] at the expense of higher switching energies.”
• Development of a SiC JFET-Based Six-Pack Power Module for a Fully Integrated Inverter (2013, background): “In [25], the SiC JFET has been pushed to extremely high ambient temperatures, 450 ◦C.”
• A Survey of Wide Bandgap Power Semiconductor Devices (2014, background): “makes them suitable for many applications in aerospace and space missions [9] although high-temperature reliable device packaging needs to be developed [10], [11].”
• State of the art of high temperature power electronics (2009, methodology): “A picture of the inverter can be seen in figure 3 Finally, in [19], a buck converter (SiC JFET and SBD) is tested at 400°C.”
• Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives (2014, background): “For example, in [1], [2] very high converter efficiencies were reported under high temperature and low switching frequency conditions.”
• A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices (2014, neutral): “temperature capability was showcased in [10].”
• High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications (2016, background): “Evaluation of high temperature operation are reported in several studies [12]–[16].”