Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

By G. Y. Chung, C. Tin, J. Williams, K. McDonald, R. Chanana, R. Weller, S. Pantelides, L. C. Feldman, O. W. Holland, M. Das and 1 more. IEEE Electron Device Letters, 2001

596 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/63b1f4b88ec00eaa6702213abeaeb762ba0035ce

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide (2010, background): “Relatively high values of channel mobility, up to about 50 cm(2)/V · s, can be obtained via nitridation [3], [4].”
SiC power-switching devices-the second electronics revolution? (2002, background): “Moreover, the inversion layer mobility of epitaxial MOSFETs is increased significantly [ 32 ], [33], as illustrated in Fig. 13. In this figure, the two lower curves represent inversion layer field-effect mobility of samples without a postoxidation NO anneal (measured before and after the ohmic conta”
Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability (2019, result): “However, also in this respect, there were and are steady improvements, as shown, for example, in [10] and [11].”
Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements (2008, background): “which have been shown to adversely affect the mobility [5].”