Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]

By M. Roschke, Frank Schwierz. 2001

366 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4c08fec00450d8de3cc74a420c7ec9a86168b765

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In Electrical and Electronic Engineering

1. Kuang Sheng
2. Zheng Chen

Citations in the corpus

• A Physical Model of High Temperature 4H-SiC MOSFETs (2008, methodology): “Various models for bulk and surface mobility in silicon and SiC devices that exist in the literature have been modified and used for simulating the behavior of 4H-SiC MOSFETs [1]–[6].”
• SiC Power Devices for Microgrids (2010, background): “The diffusion coefficient is proportional to mobility and decreases with T [24], while the lifetime increases with T [25].”
• High Temperature Stability and the Performance Degradation of SiC MOSFETs (2014, background): “A commonly accepted model describes the electron mobility dependence on the temperature at a low electric field as μ = μ300( T 300K ) γ (γ < 0) [17],.”