Peide D. Ye

Materials Chemistry · 2003–2022

A researcher in the Science corpus: 29 papers; trusts 12 researchers and is trusted by 8 researchers here, as inferred from the citation graph.

Subfields

• Materials Chemistry — 402 citations into it; #3,627 of 11,513 by trust here, #614 by citations
• Electrical and Electronic Engineering — 171 citations into it; #6,689 of 16,539 by trust here, #1,244 by citations
• Biomedical Engineering — 66 citations into it

Whom Peide D. Ye trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. G. Wilk
2. Han Liu
3. J. D. del Alamo
4. B. Radisavljevic
5. K. Novoselov

Who trusts Peide D. Ye overall

1. Yi Xuan
2. Han Liu
3. Kelin J. Kuhn
4. J. D. del Alamo
5. G. Wilk

Papers from Peide D. Ye's perspective

Ordered by how strongly the researchers Peide D. Ye trusts endorse each paper. Same corpus, a different order for every researcher.

1. Energy band-gap engineering of graphene nanoribbons. (Physical Review Letters)
2. Single-layer MoS2 transistors. (Nature Nanotechnology)
3. Graphene nano-ribbon electronics
4. Atomically thin MoS₂: a new direct-gap semiconductor. (Physical Review Letters)
5. Channel length scaling of MoS2 MOSFETs. (ACS Nano)
6. Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors (IEEE Transactions on Electron Devices)
7. The origins and limits of metal-graphene junction resistance. (Nature Nanotechnology)
8. Graphene transistors. (Nature Nanotechnology)
9. High performance multilayer MoS2 transistors with scandium contacts. (Nano letters (Print))
10. Probing excitonic dark states in single-layer tungsten disulphide (Nature)

Their papers

• Top-gated graphene field-effect-transistors formed by decomposition of SiC (2008) — 219 citations
• Channel length scaling of MoS2 MOSFETs. (2012) — 785 citations
• Chloride molecular doping technique on 2D materials: WS2 and MoS2. (2014) — 690 citations
• Phosphorene: an unexplored 2D semiconductor with a high hole mobility. (2014) — 4,697 citations
• Semiconducting black phosphorus: synthesis, transport properties and electronic applications. (2014) — 1,102 citations
• Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus (2015) — 621 citations
• The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights (2014) — 151 citations
• A critical review of recent progress on negative capacitance field-effect transistors (2019) — 180 citations
• Atomic-layer-deposited nanostructures for graphene-based nanoelectronics (2008) — 225 citations
• The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition (2012) — 162 citations
• High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm (2016) — 239 citations
• β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect (2017) — 198 citations
• GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition (2003) — 243 citations
• Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode. (2014) — 1,170 citations
• Fundamentals of III-V Semiconductor MOSFETs (2010) — 236 citations
• Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition (2004) — 140 citations
• Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs (2005) — 250 citations
• Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric (2006) — 151 citations
• Scaled indium oxide transistors fabricated using atomic layer deposition (2022) — 251 citations
• Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes (2020) — 203 citations