Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

By Yi Xuan, H. Lin, Peide D. Ye, G. Wilk. 2006

151 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/dfa3986e33074852d891fdd64f3033e44dd9eaa6

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Kelin J. Kuhn
2. Bevan M. Baas
3. Aaron Stillmaker
4. Qiang Li
5. Kei May Lau

In Materials Chemistry

1. Kelin J. Kuhn

Citations in the corpus

• High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm (2008, background): “with conventional atomic-layer-deposited (ALD) Al2O3, HfO2, and HfAlO are systematically studied [8], [13], [14], [16].”
• Considerations for Ultimate CMOS Scaling (2012, background): “Note that the states generated by group V dimers of In-containing compounds are predicted to lie inside the conduction band [176], which may explain the improvement in device characteristics when the In percentage is increased [187] and the success of InAs and InGaAs systems with a variety of dielec”