β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

By Hong Zhou, K. Maize, G. Qiu, Ali Shakouri, Peide D. Ye. 2017

198 citations recorded by the source corpus.

We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a highly doped β-Ga2O3 nano-membrane as the channel. β-Ga2O3 on insulator field-effect transistor (GOOI FET) shows a high on/off ratio of 1010 and low subthreshold slope of 150 mV/dec even with 300 nm thick SiO2. The enhancement-mode GOOI FET is achieved through surface depletion. An ultra-fast, high resolution thermo-reflectance imaging technique is applied to study the self-heating effect by directly measuring the local surface temperature. High drain current, low Rc, and wide bandgap make the β-Ga2O3 on insulator field-effect transistor a promising candidate for future power electronics applications.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/aafa64f80c1c91dce8ebdf90cf01ea97d453d3eb

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In Electrical and Electronic Engineering

1. Lei Yuan
2. Yuming Zhang
3. Hongpeng Zhang
4. Xiaoyan Tang
5. Jichao Hu
6. Jianwu Sun
7. Renxu Jia
8. Yimen Zhang

In Electronic, Optical and Magnetic Materials

1. Uttam Singisetti
2. Ke Zeng
3. Lei Yuan
4. Yuming Zhang
5. Hongpeng Zhang
6. Xiaoyan Tang
7. Jichao Hu
8. Jianwu Sun

Citations in the corpus

• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “involves reactive ion etching (RIE) with pure BCl3 or Ar/BCl3, inductively coupled plasma (ICP) etching using pure BCl3 or Ar/BCl3, UV/O3 treatment [143] and Ar plasma bombardment [17], [136], [137].”
• 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (2018, background): “Recently, high current density transistors based on delta doping [4] and nano-membrane platform [5] are demonstrated showing its low-power loss potential and for RF applications [6].”