GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

By Peide D. Ye, G. Wilk, J. Kwo, B. Yang, H. Gossmann, M. Frei, S. Chu, J. Mannaerts, M. Sergent, M. Hong and 2 more. IEEE Electron Device Letters, 2003

243 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/90f965e53636cd8959b6b9caed2b8b8a00350969

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Peide D. Ye
2. Yi Xuan
3. Kelin J. Kuhn
4. Bevan M. Baas
5. Aaron Stillmaker
6. Qiang Li
7. Kei May Lau

In Materials Chemistry

1. Peide D. Ye
2. Kelin J. Kuhn

Citations in the corpus

• Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric (2007, background): “Although high-performance depletion-mode GaAs MOSFETs have been previously demonstrated [10], [12]–[14],”
• Considerations for Ultimate CMOS Scaling (2012, background): “[181] P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H.-J. L. Gossmann, M. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, “GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition,” IEEE Electron Device Lett., vol. 24, no. 4, pp. 209– 211, Apr. 2003.”
• Electrical and Interfacial Characterization of Atomic Layer Deposited High- $\kappa$ Gate Dielectrics on GaAs for Advanced CMOS Devices (2007, background): “Recently, atomic-layerdeposited (ALD) high-κ gate dielectrics have been attempted on GaAs [ 14 ]–[16].”