Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode.
By Yexin Deng, Zhe Luo, N. Conrad, Han Liu, Y. Gong, S. Najmaei, Pulickel M. Ajayan, J. Lou, Xianfan Xu, Peide D. Ye. ACS Nano, 2014
1,170 citations recorded by the source corpus.
Phosphorene, a elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (∼10,000 cm(2)/V·s) and a ∼0.3 eV direct band gap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm(2)/V·s, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness-dependent direct band gap. However, p–n junctions, the basic building blocks of modern electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate-tunable p–n diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p–n heterojunction. Upon illumination, these ultrathin p–n diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p–n diodes show promise for broad-band photodetection and solar energy harvesting.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/9450eea1e2ac7844b312f81674ab94498fc430fc
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In Materials Chemistry
Citations in the corpus
- Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction (2015, background): “Although research on vdWHs is at its beginning and many unique properties as well as fundamental issues are still unclear and need to be addressed, such heterojunctions have been already demonstrated as competitive pn junctions [250][251] [252], vertical [253] and tunneling [254] FETs, photodetector”
- Two-dimensional MoS2: Properties, preparation, and applications (2015, background): “8% (220 nm MoS2) [60] MoS2 CVD Black PeMoS2 p-n junction EQE 0.”