Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

By Peide D. Ye, G. Wilk, B. Yang, J. Kwo, H. Gossmann, M. Hong, K. Ng, J. Bude. 2004

140 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4c30584865abf3b6d17d820a28502db1ebfee502

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In Electrical and Electronic Engineering

1. Peide D. Ye
2. Yi Xuan

In Materials Chemistry

1. Peide D. Ye

Citations in the corpus

• Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric (2007, background): “Although high-performance depletion-mode GaAs MOSFETs have been previously demonstrated [10], [12]–[14],”